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APTGT150DU170
Dual common source Trench + Field Stop IGBT(R) Power Module
C1 Q1 G1 C2 Q2 G2
VCES = 1700V IC = 150A @ Tc = 80C
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile
E1
E2
E
G1 E1
C1
E
C2
E2 G2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Reverse Bias Safe Operating Area
300A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-5
APTGT150DU170 - Rev 0
May, 2005
Max ratings 1700 250 150 300 20 890
Unit V A V W
APTGT150DU170
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 150A Tj = 125C VGE = VCE , IC = 3mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 350 2.4 6.5 600 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 150A R G = 4.7 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 150A R G = 4.7
Min
Typ 13.5 0.55 0.44 370 40 650 180 400 50 800 300 48 47
Max
Unit nF
ns
ns
mJ
Diode ratings and characteristics
Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1700
Typ
Max 350 600
Unit V A A
Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=1700V
50% duty cycle
IF = 150A IF = 150A VR = 900V
di/dt =1600A/s
150 1.8 1.9 385 490 40 64
2.2
V ns C
May, 2005
APT website - http://www.advancedpower.com
2-5
APTGT150DU170 - Rev 0
APTGT150DU170
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt
Thermal and package characteristics
Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode
Min
Typ
Max 0.14 0.26 150 125 100 5 3.5 280
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
3400 -40 -40 -40 3 2
Package outline (dimensions in mm)
APT website - http://www.advancedpower.com
3-5
APTGT150DU170 - Rev 0
May, 2005
APTGT150DU170
Typical Performance Curve
Output Characteristics (V GE=15V) Output Characteristics 300 250 200 IC (A)
T J=125C VGE =13V T J = 125C VGE=20V
300 250 200
IC (A)
T J=25C
150 100 50 0 0 1 2 VCE (V) 3 4
150
VGE =15V
100 50 0 0 1 2 3 VCE (V) 4 5
VGE=9V
Transfert Characteristics 300 250 200 150 100 50 0 5 6 7 8 9 V GE (V) Switching Energy Losses vs Gate Resistance 120 100 80 E (mJ) 60 40 20 0 0 5 10 15 20 25 Gate Resistance (ohms) 30
VCE = 900V VGE =15V IC = 150A TJ = 125C Eon T J=125C TJ=125C TJ =25C
120 100 80 E (mJ) 60 40 20 0
Energy losses vs Collector Current
VCE = 900V VGE = 15V RG = 4.7 TJ = 125C Eon Eoff Er
IC (A)
10
11
12
13
0
50
100
150 IC (A)
200
250
300
Reverse Bias Safe Operating Area 350 300 250 IC (A) 200 150 100 50 0 0 400 800 1200 1600 2000 VCE (V)
VGE=15V T J=125C RG=4.7
Eoff Er
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.16 Thermal Impedance (C/W) 0.14 0.12 0.9 IGBT
0.08 0.06 0.04 0.02
0.5 0.3 Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
0.1 0.05 0 0.00001
APT website - http://www.advancedpower.com
4-5
APTGT150DU170 - Rev 0
May, 2005
0.1
0.7
APTGT150DU170
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 25 20
ZCS VCE =900V D=50% RG=4.7 TJ=125C TC=75C
Forward Characteristic of diode 300 250
TJ=25C
ZVS
IC (A)
15 10 5 0 0 40 80 120 IC (A)
hard switching
200 150
TJ=125C
100 50 0 160 200 240 0 0.5 1 1.5 VF (V) 2 2.5 3
TJ=125C
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.3 Thermal Impedance (C/W) 0.25 0.2 0.15 0.1 0.05
Diode
0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds)
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGT150DU170 - Rev 0
APT reserves the right to change, without notice, the specifications and information contained herein
May, 2005

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